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Microscopy of Semiconducting Materials 1991: Proceedings of the Institute of Physics Conference held at Oxford University, 25-28 March 1991

AUTHOR: A. G. Cullis (Editor)
ISBN: 0854984062

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         Editorial Review

Microscopy of Semiconducting Materials 1991: Proceedings of the Institute of Physics Conference held at Oxford University, 25-28 March 1991
- Book Review,
by A. G. Cullis (Editor)

From Book News, Inc.
Proceedings of the seventh conference on the Microscopy of Semiconducting Materials held at Oxford University, March 1991, span fundamental research areas and developments in device processing technologies. Papers are grouped in sections on: high resolution microscopy, microanalysis, dislocations and grain boundaries, processed silicon, metal semiconductor contacts and silicides, bulk gallium arsenide and other compounds, epitaxial layers, quantum wells and superlattices, X-ray studies, and advanced scanning microscopy techniques. Annotation copyright Book News, Inc. Portland, Or.


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         Book Review

Microscopy of Semiconducting Materials 1991: Proceedings of the Institute of Physics Conference held at Oxford University, 25-28 March 1991
- Book Reviews,
by A. G. Cullis (Editor)

Microscopy of Semiconducting Materials 1991: Proceedings of the Institute of Physics Conference held at Oxford University, 25-28 March 1991

FROM THE PUBLISHER

Graduate Student Series in Physics A comprehensive introduction to current research into disordered matter, liquid and solid, metallic, insulating and semiconducting. The book describes pertinent properties and basic theoretical methods for explaining them. it also shows directions of current research. Intended for postgraduate students, advanced undergraduates and research workers in related areas.

FROM THE CRITICS

Booknews

Proceedings of the seventh conference on the Microscopy of Semiconducting Materials held at Oxford University, March 1991, span fundamental research areas and developments in device processing technologies. Papers are grouped in sections on: high resolution microscopy, microanalysis, dislocations and grain boundaries, processed silicon, metal semiconductor contacts and silicides, bulk gallium arsenide and other compounds, epitaxial layers, quantum wells and superlattices, X-ray studies, and advanced scanning microscopy techniques. Annotation c. Book News, Inc., Portland, OR (booknews.com)


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