From Book News, Inc.
Aimed at undergraduate students in applied physics, electrical and electronics engineering, and materials science, this text introduces semiconductor theory and its practical applications with an emphasis on integrated circuits. A sampling of topics includes the properties of silicon and gallium arsenide, the p-n junction, photonic devices, crystal growth, and impurity doping. Sze, who teaches at National Chiao Tung University in Taiwan, is the co-inventor of the nonvolatile semiconductor memory.Copyright © 2004 Book News, Inc., Portland, OR
Book Description
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
The publisher, John Wiley & Sons
Solutions Manual and Student's Solutions Manual available.
Book Info
An introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. Previous edition c1985.
The publisher, John Wiley & Sons
A basic introduction to the physical properties of semiconductor devices and fabrication technology, this work presents the theoretical and practical aspects of every step in device fabrication, with an emphasis on integrated circuits. Divided into three parts, it covers the basic properties of semiconductors and processes, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices, bipolar and unipolar devices, and special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.
From the Back Cover
This eagerly-anticipated revision offers more than 50ew or revised material that reflects the multitude of important recent discoveries and advances in device physics and integrated circuit processing.
The book offers a thorough introduction to physical principles of modern semiconductor devices and their fabrication technology. Readers are presented with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.
The material is divided into three parts: the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide the physics and characteristics of semiconductor device bipolar, unipolar special microwave and photonic devices the latest processing technologies, from crystal growth to lithographic pattern transfer
Each chapter is presented in a logical manner enabling readers to learn all important devices from a single source. Plus, the book covers historical developments of devices and technology in the last 100 years. Readers gain a sound perspective on the past and a foundation for projecting future trends.
About the Author
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his "fundamental and pioneering contributions..." He received his PhD in solid-state electronic from Stanford University in 1963.
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